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參數(shù)資料
| 型號： | 20MT120UF |
| 廠商： | International Rectifier |
| 英文描述： | UltraFast NPT IGBT |
| 中文描述： | 超快速IGBT的不擴(kuò)散核武器條約 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 699K |
| 代理商： | 20MT120UF |
3
20MT120UF
I27124 rev. D 02/03
www.irf.com
V
FM
Diode Forward Voltage Drop
2.48
3.28
2.44
3.45
2.21
420
98
33
2.94
3.90
2.84
4.14
2.93
630
150
50
V
I
C
= 20A
I
C
= 40A
I
C
= 20A, T
J
= 125°C
I
C
= 40A, T
J
= 125°C
I
C
= 20A, T
J
= 150°C
V
GE
= 15V, R
g
= 5
, L = 200μH
V
CC
= 600V, I
C
= 20A
T
J
= 125°C
E
rec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
μJ
ns
A
Thermal- Mechanical Specifications
T
J
T
STG
R
thJC
Operating Junction Temperature Range
Storage Temperature Range
- 40
- 40
150
125
°C
Junction-to-Case
IGBT
0.35
0.52
°C/ W
Diode
0.40
0.61
R
thCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (
external shortest distance in air
5.5
mm
between two terminals)
Creepage (
shortest distance along external
8
surface of the insulating material between 2 terminals
)
T
Wt
Mounting Torque
Weight
(2)
3 ± 10%
66
Nm
g (oz)
Parameters
Min
Typ
Max
Units
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
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