HGT1S20N60A4S

9A

March 2006

Data Sheet

600V, SMPS Series N-Channel IGBTs

The HGT

1S20N60A4S

9A

is

MOS gated

high voltage switching

devices combining the best features

of MOSFETs and bipolar

transistors. These devices have the

high input impedance of

a MOSFET and the low on-state

conduction loss of a bipolar

transistor. The much lower

on-state voltage drop varies only

moderately between 25

o

C and 150

o

C.

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential.

This device has been

optimized for high frequency switch mode power

supplies

.

Formerly Developmental Type TA49339.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGT1S20N60A4S

9A

TO-263AB

20N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

G

E

Features

>100kHz Operation at 390V, 20A

200kHz Operation at 390V, 12A

600V Switching SOA Capability

Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T

J

= 125

o

C

Low Conduction Loss

Temperature Compensating

SABER Model

www.intersil.com

Related Literature

- TB334 “Guidelines for Soldering Surface Mount