參數(shù)資料
型號(hào)： 20N60A4
廠商： Fairchild Semiconductor Corporation
英文描述： 600V, SMPS Series N-Channel IGBTsnull
中文描述： 600V的，開(kāi)關(guān)電源系列N溝道IGBTsnull
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 219K
代理商： 20N60A4
HGT1S20N60A4S
9A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S20N60A4S
9A
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
70
40
280
±
20
±
30
A
A
A
V
V
100A at 600V
290
2.32
-55 to 150
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
BV
ECS
I
CES
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 600V
600
-
-
V
Emitter to Collector Breakdown Voltage
15
-
-
V
Collector to Emitter Leakage Current
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
1.8
2.7
V
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= 600V
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V
L = 100
μ
H, V
CE
= 600V
I
C
= 20A, V
CE
= 300V
I
C
= 20A,
V
CE
= 300V
4.5
5.5
7.0
V
Gate to Emitter Leakage Current
-
-
±
250
nA
Switching SOA
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
g(ON)
-
8.6
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
142
162
nC
-
182
210
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
=15V
R
G
= 3
L = 500
μ
H
Test Circuit (Figure 20)
-
15
-
ns
Current Rise Time
-
12
-
ns
Current Turn-Off Delay Time
-
73
-
ns
Current Fall Time
-
32
-
ns
Turn-On Energy (Note 3)
-
105
-
μ
J
Turn-On Energy (Note 3)
-
280
350
μ
J
Turn-Off Energy (Note 2)
-
150
200
μ
J
200
6
Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
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