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參數(shù)資料
| 型號： | 20N60A4 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V, SMPS Series N-Channel IGBTsnull |
| 中文描述： | 600V的，開關(guān)電源系列N溝道IGBTsnull |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 219K |
| 代理商： | 20N60A4 |
20
0
80
40
60
25
100
300
500
HGT1S20N60A4S
9A
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
= 15V
R
G
= 3
L = 500
μ
H
Test Circuit (Figure 20)
MIN
TYP
MAX
UNITS
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θ
JC
-
15
1
ns
Current Rise Time
-
13
8
ns
Current Turn-Off Delay Time
-
105
135
ns
Current Fall Time
-
55
3
ns
Turn-On Energy (Note 3)
-
115
-
μ
J
Turn-On Energy (Note 3)
-
510
600
μ
J
Turn-Off Energy (Note 2)
-
330
500
μ
J
o
C/W
Thermal Resistance Junction To Case
-
-
0.43
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves
Unless Otherwise Specified
I
C
,
120
100
80
60
40
20
0
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
0
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
200
300
400
500
600
700
V
GE
= 15V
DIE CAPABILITY
PACKAGE LIMIT
I
C
,
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
J
= 125
o
C, R
G
= 3
, L = 500
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.43
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
V
GE
15V
t
S
,
μ
s
14
I
S
,
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
I
SC
t
SC
f
M
,
12
10
350
8
300
6
250
4
2
150
0
100
10
20
30
40
50
10
11
12
13
14
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
200
6
Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
5
40
100
450
200
400
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