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參數(shù)資料
| 型號： | 1N4150-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) Vr/50V Io/150mA T/R |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 1N4150-TR |
1N4150
Document Number 85522
Rev. 1.8, 20-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
Low forward voltage drop
AEC-Q101 qualified
High forward current capability
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
1N4150
1N4150-TR or 1N4150-TAP
1N4150
Tape and Reel/Ammopack
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
tot
P
tot
Value
50
Unit
V
Reverse voltage
50
V
Peak forward surge current
t
p
= 1 μs
4
A
Average peak forward current
600
mA
Forward continuous current
300
mA
Average forward current
V
R
= 0
150
mA
Power dissipation
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
≤
25 °C
440
mW
500
mW
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction temperature
175
°C
Storage temperature range
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4150TR_S00Z | 功能描述:整流器 High Conductance Ultra Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4150UR-1 | 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 0.2A 2-Pin DO-213AA 制造商:Microsemi Corporation 功能描述:SWITING 50V 0.2A 2PIN DO-213AA - Bulk 制造商:Microsemi 功能描述:Diode Switching 50V 0.2A 2-Pin DO-213AA |
| 1N4150UR-1/TR | 功能描述:SWITCHING 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:50V 電流 - 平均整流（Io）:200mA 不同 If 時(shí)的電壓 - 正向（Vf:1V @ 200mA 速度:小信號 =< 200mA（Io），任意速度 反向恢復(fù)時(shí)間（trr）:4ns 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 50V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:表面貼裝 封裝/外殼:DO-213AA 供應(yīng)商器件封裝:DO-213AA 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:100 |
| 1N4150UR-1JAN | 制造商:Microsemi Corporation 功能描述: |
| 1N4150UR-1JANTXTR | 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 0.2A 2-Pin DO-213AA T/R |
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