參數(shù)資料
型號: 1N4151-TR
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述: Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA T/R
文件頁數(shù): 1/4頁
文件大小: 99K
代理商: 1N4151-TR
1N4151
Document Number 85523
Rev. 1.8, 17-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
Extreme fast switches
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode Band Color:
black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
1N4151
1N4151-TR or 1N4151-TAP
1N4151
Tape and Reel/Ammopack
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
tot
P
tot
Value
75
Unit
V
Reverse voltage
50
V
Peak forward surge current
t
p
= 1 μs
2
A
Repetitive peak forward current
500
mA
Forward continuous current
300
mA
Average forward current
V
R
= 0
150
mA
Power dissipation
I = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
25 °C
440
mW
500
mW
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction temperature
175
°C
Storage temperature range
- 65 to + 175
°C
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PDF描述
1N4151TAP 1N4151 Small Signal Fast Switching Diodes
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