參數(shù)資料
型號: 1N4151W-V-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SWITCHING DIODE GENPURP SOD123-E3 - Tape and Reel
中文描述: Diodes (General Purpose, Power, Switching) 75 Volt 500mA 2ns
文件頁數(shù): 1/5頁
文件大?。?/td> 82K
代理商: 1N4151W-V-GS18
1N4151W
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85721
Small Signal Fast Switching Diode
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART
ORDERING CODE
1N4151W-E3-08 or 1N4151W-E3-18
1N4151W-HE3-08 or 1N4151W-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
1N4151W
Single diode
A5
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load
(1)
Surge current
t < 1 s and T
j
= 25 °C
Power dissipation
(1)
TEST CONDITION
SYMBOL
V
R
V
RRM
VALUE
50
75
UNIT
V
V
f
50 Hz
I
F(AV)
150
mA
I
FSM
P
tot
500
410
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
450
150
- 65 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
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