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參數(shù)資料
| 型號： | 1N4448-TAP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.3 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | 1N4448-TAP |
1N4448
Document Number 81858
Rev. 1.1, 17-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Fast Switching Diodes
Features
Silicon epitaxial planar diodes
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
Extreme fast switches
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode Band Color:
black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
1N4448
1N4448-TAP or 1N4448-TR
V4448
Ammopack/tape and reel
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
tot
P
tot
Value
100
Unit
V
Reverse voltage
75
V
Peak forward surge current
t
p
= 1 μs
2
A
Repetitive peak forward current
500
mA
Forward continuous current
300
mA
Average forward current
V
R
= 0
150
mA
Power dissipation
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
≤
25 °C
440
mW
500
mW
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction temperature
175
°C
Storage temperature range
- 65 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4448TR | Diode Small Signal Switching 100V 0.3A 2-Pin DO-35 T/R |
| 1N4448W-V-GS08 | Diode Small Signal Switching 100V 0.15A 2-Pin SOD-123 T/R |
| 1N4448W-V-GS18 | Diode Small Signal Switching 100V 0.15A 2-Pin SOD-123 T/R |
| 1N5818 | DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode |
| 1N5819TR | DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4448-TP | 功能描述:二極管 - 通用，功率，開關(guān) 100V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N4448TR | 功能描述:二極管 - 通用，功率，開關(guān) Vr/75V Io/150mA T/R RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N4448-TR | 制造商:Vishay Angstrohm 功能描述:Diode Small Signal Switching 100V 0.3A 2-Pin DO-35 T/R 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE 100V 150mA DO-35 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE, 100V, 150mA, DO-35; Diode Type:Switching; Forward Current If(AV):150mA; Repetitive Reverse Voltage Vrrm Max:100V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:8ns; Forward Surge Current Ifsm Max:2A ;RoHS Compliant: Yes |
| 1N4448TR_S00Z | 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4448W | 功能描述:穩(wěn)壓二極管 Switching diode 400 mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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