參數(shù)資料
型號(hào): 1N4448W-V-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Diode Small Signal Switching 100V 0.15A 2-Pin SOD-123 T/R
中文描述: Diodes (General Purpose, Power, Switching) 100 Volt 500mA 4ns
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 85K
代理商: 1N4448W-V-GS18
1N4448W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 13-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85722
Small Signal Fast Switching Diode
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Packaging codes/options:
18/10K per 13
"
reel (8 mm tape), 10K/box
08/3K per 7
"
reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART
ORDERING CODE
1N4448W-E3-08 or 1N4448W-E3-18
1N4448W-HE3-08 or 1N4448W-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
1N4448W
Single diode
A3
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load
(1)
Surge current
t < 1 s and T
j
= 25 °C
Power dissipation
(1)
TEST CONDITION
SYMBOL
V
R
V
RRM
VALUE
75
100
UNIT
V
V
f
50 Hz
I
F(AV)
150
mA
I
FSM
P
tot
500
500
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature
Operating temperature
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
350
150
- 65 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
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