參數(shù)資料
型號： 1N4151W-V-GS18
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： SWITCHING DIODE GENPURP SOD123-E3 - Tape and Reel
中文描述： Diodes (General Purpose, Power, Switching) 75 Volt 500mA 2ns
文件頁數(shù)： 2/5頁
文件大小： 82K
代理商： 1N4151W-V-GS18
1N4151W
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85721
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 2 -
Dynamic Forward Resistance vs. Forward Current
Fig. 3 -
Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 -
Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 50 mA
V
R
= 50 V
V
R
= 20 V, T
j
= 150 °C
Reverse breakdown voltage
I
R
= 5 μA (pulsed)
Diode capacitance
V
F
= V
R
= 0 V
I
F
= 10 mA, I
R
= 10 mA
i
R
= 1 mA
I
F
= 10 mA, i
R
= 1 mA
V
R
= 6 V, R
L
= 100
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
MIN.
TYP.
MAX.
1.0
50
50
UNIT
V
nA
μA
V
pF
Leakage current
75
2
Reverse recovery time
t
rr
4
ns
t
rr
2
ns
18742
1000
100
10
1
0.1
0.01
I
w
a
u
r
F
0
0.4 0.6 0.8
V
- For
w
ard
V
oltage (
V
)
F
1 1.2 1.4 1.6 1.8 2
0.2
= 100
°
C
T
j
25
°
C
18662
1
0.01
10
100
1000
10000
r
w
a
f
(
1
10
0.1
100
I
F
- For
w
ard C
u
rrent (mA)
= 25
°
C
f = 1 kHz
T
j
200
18743
T
am
b
- Am
b
ient Temperat
u
re (°C)
1000
800
600
400
200
20 40 60 80 100 120 140 160180
P
-
b
l
w
e
t
0
0
18664
2
V
R
- Re
v
erse
V
oltage (
V
)
4
6
8
0
1.1
1.0
0.9
0.8
0.7
10
C
D
(
V
R
)
D
(
V
)
v
e
= 25
°
C
f = 1 MHz
T
j
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