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參數(shù)資料
| 型號： | 1N4150W-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1N4150W-V Small Signal Fast Switching Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) 50 Volt 500mA 4ns |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 1N4150W-V-GS18 |
1N4150W
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85720
Small Signal Fast Switching Diode
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Packaging codes/options:
18/10K per 13
"
reel (8 mm tape), 10K/box
08/3K per 7
"
reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
For general purpose and switching
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
INTERNAL CONSTRUCTION
REMARKS
1N4150W
1N4150W-E3-08 or 1N4150W-E3-18
1N4150W-HE3-08 or 1N4150W-HE3-18
A4
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Maximum average forward rectified current
Maximum power dissipation
(1)
TEST CONDITION
SYMBOL
V
RRM
I
F(AV)
P
tot
VALUE
50
200
410
UNIT
V
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Maximum junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
375
150
- 65 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
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