參數(shù)資料
型號: 1N4150-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述: Diodes (General Purpose, Power, Switching) Vr/50V Io/150mA
文件頁數(shù): 2/3頁
文件大?。?/td> 96K
代理商: 1N4150-TAP
www.vishay.com
2
Document Number 85522
Rev. 1.8, 20-Aug-10
1N4150
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Package Dimensions
in mm (inches):
DO-35
Test condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 50 V
V
R
= 50 V, T
j
= 150 °C
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
I
F
= I
R
= (10 to 100) mA, i
R
= 0.1
x I
R
, R
L
= 100
Ω
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
I
R
C
D
Min.
540
Typ.
Max.
620
Unit
mV
Forward voltage
660
740
mV
760
860
mV
820
920
mV
870
1000
mV
Reverse current
100
nA
100
μA
Diode capacitance
2.5
pF
Reverse recovery time
t
rr
4
ns
Figure 1. Reverse Current vs. Junction Temperature
0
40
8
0
120
160
200
0.01
0.1
1
10
100
I
v
e
u
r
μ
A
R
T
j
- J
u
nction Temperat
u
re (°C)
94 9100
Scattering Limit
V
R
= 50
V
Figure 2. Forward Current vs. Forward Voltage
0
0.4
0.
8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
2.0
94 9162
Scattering Limit
T
j
= 25 °C
94 9366
26 (1.024) min.
3.9 (0.154) max.
26 (1.024) min.
0
Cathode identification
1
1
Re
v
. 6 - Date: 29. Jan
u
ary 2007
Doc
u
ment no.: 6.560-5004.02-4
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