參數(shù)資料
型號(hào)： 1N4150-TAP
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述： Diodes (General Purpose, Power, Switching) Vr/50V Io/150mA
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 96K
代理商： 1N4150-TAP
1N4150
Document Number 85522
Rev. 1.8, 20-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
Low forward voltage drop
AEC-Q101 qualified
High forward current capability
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Part
Ordering code
Type Marking
Remarks
1N4150
1N4150-TR or 1N4150-TAP
1N4150
Tape and Reel/Ammopack
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
tot
P
tot
Value
50
Unit
V
Reverse voltage
50
V
Peak forward surge current
t
p
= 1 μs
4
A
Average peak forward current
600
mA
Forward continuous current
300
mA
Average forward current
V
R
= 0
150
mA
Power dissipation
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
≤
25 °C
440
mW
500
mW
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
Unit
K/W
Junction temperature
175
°C
Storage temperature range
- 65 to + 175
°C
相關(guān)PDF資料
PDF描述
1N4150-TR DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
1N4150W-V-GS08 Diode Small Signal Switching 50V 0.2A 2-Pin SOD-123 T/R
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N4150-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 50V 0.2A 2-Pin DO-35 T/R 制造商:Micro Commercial Components 功能描述:Diode Switching 50V 0.2A 2-Pin DO-35 T/R
1N4150TR 功能描述:二極管 - 通用，功率，開關(guān) Vr/50V Io/150mA T/R RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
1N4150-TR 制造商:Vishay Angstrohm 功能描述:Diode Small Signal Switching 50V 0.15A 2-Pin DO-35 T/R 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE, 50V, 200mA, DO-35; Diode Type:Small Signal; Forward Current If(AV):200mA; Repetitive Reverse Voltage Vrrm Max:50V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA ;RoHS Compliant: Yes 制造商:Vishay 功能描述:Diode Small Signal Switching 50V 0.15A 2-Pin DO-35 T/R
1N4150TR_S00Z 功能描述:整流器 High Conductance Ultra Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N4150UR-1 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 0.2A 2-Pin DO-213AA 制造商:Microsemi Corporation 功能描述:SWITING 50V 0.2A 2PIN DO-213AA - Bulk 制造商:Microsemi 功能描述:Diode Switching 50V 0.2A 2-Pin DO-213AA
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