參數(shù)資料
型號(hào): 160V
廠商: Lattice Semiconductor Corporation
英文描述: In-System Programmable 3.3V Generic Digital CrosspointTM
中文描述: 在系統(tǒng)可編程3.3V的通用數(shù)字CrosspointTM
文件頁數(shù): 17/37頁
文件大?。?/td> 464K
代理商: 160V
17
Specifications
ispGDX160V
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
I/O Active Pull-Up Current
Bus Hold Low Sustaining Current
Bus Hold High Sustaining Current
Bus Hold Low Overdrive Current
Bus Hold High Overdrive Current
Bus Hold Trip Points
Output Short Circuit Current
Quiescent Power Supply Current
Dynamic Power Supply Current
per Input Switching
Maximum Continuous I/O Pin Sink
Current Through Any GND Pin
I
OL
=24 mA
I
OH
=-12 mA
0V
V
IN
V
IL
(Max.)
V
CC
V
IN
5.25V
0V
V
IN
V
IL
V
IN
= V
IL
(Max.)
V
IN
= V
IH
(Min.)
0V
V
IN
V
CC
0V
V
IN
V
CC
V
CC
= 3.3V, V
OUT
= 0.5V, T
A
= 25
C
V
IL
= 0.5V, V
IH
= V
CC
One input toggling @ 50% duty cycle,
outputs open.
70
2.4
50
-50
V
IL
0.55
-10
10
-150
550
-550
V
IH
-250
96
Switching Test Conditions
DC Electrical Characteristics
Over Recommended Operating Conditions
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
V
mA
mA
mA/MHz
mA
V
OL
V
OH
I
IL
I
IH
I
IL-PU
I
BHLS
I
BHHS
I
BHLO
I
BHHO
I
BHT
I
OS
1
I
CCQ
4
I
CC
1. One output at a time for a maximum duration of one second. V
OUT
= 0.5V was selected to avoid test problems by tester ground
degradation. Characterized but not 100% tested.
2. Typical values are at V
= 3.3V and T
= 25
o
C.
3. I
/ MHz = (0.01 x I/O cell fanout) + 0.04
e.g. An input driving four I/O cells at 40 MHz results in a dynamic I
of approximately ((0.01 x 4) + 0.04) x 40 = 3.2 mA.
4. For a typical application with 50% of I/O pins used as inputs, 50% used as outputs or bidirectionals.
5. This parameter limits the total current sinking of I/O pins surrounding the nearest GND pin.
SYMBOL
MIN.
MAX.
TYP.
2
PARAMETER
CONDITION
UNITS
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Time
1.5ns 10% to 90%
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
Output Load
See figure at right
3-state levels are measured 0.5V from steady-state
active level.
+ 3.3V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
See
Note 3
I
CONT
5
Output Load Conditions
TEST CONDITION
R1
153
153
R2
134
134
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
Slow Slew
C
D
153
5pF
35pF
134
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2-0004A
相關(guān)PDF資料
PDF描述
160WA100M16X20 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
160WA10M10X9 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
160WA150M18X20 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
160WA220M18X25 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
160WA33M125X16 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
160V/1UF/LOW ESR 制造商:Distributed By MCM 功能描述:CAPACITOR 160V 1UF LOW ESR HITEMP,HIFREQ. RAD. 8DX11.5LMM
160V/2.2UF/105C 制造商:Distributed By MCM 功能描述:CAPACITOR 160V 2.2UF 105CHI TEMP,RADIAL (6.3D X 11L MM)
160V/2.2UF/R/ESR 制造商:Distributed By MCM 功能描述:CAPACITOR RAD ELEC 160V 2.2UF105C TOLERANCE 20%
160V/470UF/105C 制造商:Distributed By MCM 功能描述:CAPACITOR 160V 470UF 105CHI TEMP,RADIAL(22D X 40L MM)
160V/68UF/R/ESR 制造商:Distributed By MCM 功能描述:CAPACITOR 160V 68UF LOWHIGH TEMP, HIGH FREQ. RADIAL