參數(shù)資料
型號(hào)： ZXMHC3A01T8
廠商： Zetex Semiconductor
英文描述： TWEEZER THERMAL
中文描述： 互補(bǔ)30V的增強(qiáng)型MOSFET的H橋
文件頁數(shù)： 4/10頁
文件大?。?/td> 285K
代理商： ZXMHC3A01T8
ZXMHC3A01T8
S E M IC O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
30
V
I
D
= 250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
V
DS
=4.5V, I
D
= 2.5A
Zero gate voltage drain current
1.0
A
Gate-body leakage
100
nA
Gate-source threshold voltage
1.0
3.0
V
Static drain-source on-state
resistance
(1)
0.12
0.18
Forward transconductance
(1) (3)
DYNAMIC
(3)
g
fs
3.5
S
Input capacitance
C
iss
C
oss
C
rss
190
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output capacitance
38
pF
Reverse transfer capacitance
SWITCHING
(2) (3)
20
pF
Turn-on-delay time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
1.7
ns
V
DD
= 15V, I
D
= 2.5A
R
G
6.0
, V
GS
= 10V
Rise time
2.3
ns
Turn-off delay time
6.6
ns
Fall time
2.9
ns
Total gate charge
3.9
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
Gate-source charge
0.6
nC
Gate drain charge
0.9
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
S D
0.95
V
T
j
=25°C, I
S
= 1.7A,
V
GS
=0V
T
j
=25°C, I
S
= 2.5A,
di/dt=100A/ s
Reverse recovery time
(3)
Reverse recovery charge
(3)
t
rr
Q
rr
17.7
ns
13.0
nC
N-channel
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%.
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