參數(shù)資料
型號： ZXMHC3A01T8
廠商： Zetex Semiconductor
英文描述： TWEEZER THERMAL
中文描述： 互補30V的增強型MOSFET的H橋
文件頁數(shù)： 2/10頁
文件大?。?/td> 285K
代理商： ZXMHC3A01T8
ZXMHC3A01T8
S E M IC O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
2
PARAMETER
SYMBOL
N-Channel
P-channel
UNIT
Drain-source voltage
V
DS S
V
GS
30
-30
V
Gate-source voltage
Continuous drain current (V
GS
= 10V; T
A
=25°C)
(b)(d)
±20
±20
V
(V
GS
= 10V; T
A
=70°C)
(b)(d)
(V
GS
= 10V; T
A
=25°C)
(a)(d)
I
D
3.1
2.5
2.7
-2.3
-1.8
-2.0
A
A
A
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a) (d)
Linear derating factor
Power dissipation at T
A
=25°C
(b) (d)
Linear derating factor
I
DM
I
S
I
S M
P
D
14.5
-10.8
A
2.3
-2.2
A
14.5
-10.8
A
1.3
10.4
W
mW/°C
P
D
1.7
13.6
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
J unction to ambient
(a) (d)
R
J A
96
°C/W
J unction to ambient
(b) (d)
R
J A
73
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 S - pulse width limited by maximum junction temperature. Refer
to transient thermal impedance graph.
(d) For device with one active die.
THERMAL RESISTANCE
相關(guān)PDF資料
PDF描述
ZXMHC3A01T8TA COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC3A01T8TC COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC6A07T8TA COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC6A07T8TC COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMHC3A01T8TA 功能描述:MOSFET 30/30V 3.1/2.3A N & P Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMHC3A01T8TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC3F381N8 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V SO8 Complementary enhancement mode MOSFET H-Bridge
ZXMHC3F381N8TC 功能描述:MOSFET MOSFET H-BRIDGE SOP-8L RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMHC6A07N8 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V SO8 Complementary enhancement mode MOSFET H-Bridge
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