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參數(shù)資料
| 型號(hào)： | ZXMHC3A01T8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | TWEEZER THERMAL |
| 中文描述： | 互補(bǔ)30V的增強(qiáng)型MOSFET的H橋 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 285K |
| 代理商： | ZXMHC3A01T8 |
ZXMHC3A01T8
S E M IC O N D U C T O R S
10
DRAFT ISSUE E - APRIL 2004
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
These offices are supported by agents and distributors in major countries world-wide.This publication is issued to provide outline information only which (unless agreed by the Company in writing) may notbe used, applied orreproduced
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
Zetex Semiconductors plc 2004
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Typ.
Min
Max
Typ.
Min
Max
Typ.
Min
Max
Typ.
A
-
1.7
-
-
0.067
-
e1
-
-
4.59
-
-
0.1807
A1
0.02
0.1
-
0.008
0.004
-
e2
-
-
1.53
-
-
0.0602
b
-
-
0.7
-
-
0.0275
He
6.7
7.3
-
0.264
0.287
-
c
0.24
0.32
-
0.009
0.013
-
Lp
0.9
-
-
0.035
-
-
D
6.3
6.7
-
0.248
0.264
-
-
15°
-
-
15°
-
E
3.3
3.7
-
0.130
0.145
-
-
-
10°
-
-
10°
PACKAGE DIMENSIONS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE OUTLINE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXMHC3A01T8TA | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3A01T8TC | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC6A07T8TA | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC6A07T8TC | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC6A07T8 | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMHC3A01T8TA | 功能描述:MOSFET 30/30V 3.1/2.3A N & P Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMHC3A01T8TC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3F381N8 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V SO8 Complementary enhancement mode MOSFET H-Bridge |
| ZXMHC3F381N8TC | 功能描述:MOSFET MOSFET H-BRIDGE SOP-8L RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMHC6A07N8 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V SO8 Complementary enhancement mode MOSFET H-Bridge |
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