參數(shù)資料
型號(hào)： ZVNL110A
廠商： ZETEX PLC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： VARISTOR, 175J, 300VAC; Series:EnergetiQ; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:8000A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:175J; RoHS Compliant: Yes
中文描述： 320 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 22K
代理商： ZVNL110A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
100 Volt V
DS
*
R
DS(on)
=3
*
Low threshold voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
320
mA
6
A
Gate Source Voltage
±
20
700
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX .
UNIT CONDITIONS .
Drain-Source Breakdown
Voltage
BV
DS S
100
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
0.75
1.5
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=100 V, V
GS
=0
V
DS
=80 V, V
GS
=0V, T=125°C
(2)
Zero Gate Voltage Drain
Current
I
DS S
10
500
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
750
mA
V
DS
=25 V, V
GS
=5V
V
GS
=5V,I
D
=250mA
V
GS
=10V, I
D
=500mA
S tatic Drain-Source On-State
Resistance (1)
4.5
3.0
Forward Transconductance
(1)(2)
g
fs
225
mS
V
DS
=25V,I
D
=500mA
Input Capacitance (2)
C
iss
C
oss
75
pF
Common Source Output
Capacitance (2)
25
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
7
ns
V
DD
≈
25V, V
GS
=10V, I
D
=1A
Rise Time (2)(3)
12
ns
Turn-Off Delay Time (2)(3)
15
ns
Fall Time (2)(3)
13
ns
E-Line
TO92 Compatible
ZVNL110A
3-400
D
相關(guān)PDF資料
PDF描述
ZVNL110G VARISTOR, 185J, 320VAC; Series:EnergetiQ; Voltage rating, AC:320V; Suppressor type:Varistors; Voltage rating, DC:420V; Current, Peak Pulse IPP @ 8/20uS:8000A; Voltage, clamping 8/20us max:840V; Energy, transient 10/1000us max:185J; RoHS Compliant: Yes
ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVNL120G N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ZVNL535A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVP0120A Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC06; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVNL110A 制造商:Diodes Incorporated 功能描述:MOSFET N E-LINE
ZVNL110ASTOA 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVNL110ASTOB 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVNL110ASTZ 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVNL110G 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*