參數(shù)資料
型號(hào)： ZVNL120A
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述： 180 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： TO-92 COMPATIBLE, E-LINE PACKAGE-3
文件頁數(shù)： 1/3頁
文件大?。?/td> 49K
代理商： ZVNL120A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
200 Volt V
DS
*
R
DS(on)
=10
*
Low threshold
APPLICATIONS
*
Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
200
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
180
mA
2
A
Gate S ource Voltage
±
20
700
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX . UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DS S
200
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
0.5
1.5
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
I
DS S
100
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=200 V, V
GS
=0
V
DS
=160 V, V
GS
=0V, T=125°C
(2)
V
DS
=25 V, V
GS
=5V
V
GS
=5V,I
D
=250mA
V
GS
=3V, I
D
=125mA
V
DS
=25V,I
D
=250mA
Zero Gate Voltage Drain
Current
10
100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
500
mA
Static Drain-Source On-State
Resistance (1)
10
10
Forward Transconductance
(1)(2)
g
fs
200
mS
Input Capacitance (2)
C
iss
C
oss
85
pF
Common Source Output
Capacitance (2)
20
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
8
ns
V
DD
≈
25V, I
D
=250mA
Rise Time (2)(3)
8
ns
Turn-Off Delay Time (2)(3)
20
ns
Fall Time (2)(3)
12
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
3-401
E-Line
TO92 Compatible
ZVNL120A
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVNL120A 制造商:Diodes Incorporated 功能描述:MOSFET N LOGIC E-LINE
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ZVNL120ASTOA 功能描述:MOSFET P-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVNL120ASTOB 功能描述:MOSFET P-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVNL120ASTZ 功能描述:MOSFET P-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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