參數(shù)資料
型號： ZVNL535A
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述： 90 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TO-92, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 22K
代理商： ZVNL535A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
350 Volt V
DS
*
R
DS(on)
=40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
350
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
90
mA
800
±
20
700
mA
Gate Source Voltage
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX . UNIT CONDITIONS .
Drain-Source
Breakdown Voltage
BV
DS S
350
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS (th)
0.5
1.5
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=350 V, V
GS
=0
V
=280 V, V
GS
=0V,
T=125°C
(2)
Zero Gate Voltage
Drain Current
I
DS S
50
400
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
200
mA
V
DS
=25 V, V
GS
=5V
V
GS
=5V,I
D
=100mA
V
GS
=3V,I
D
=50mA
S tatic Drain-Source On-State
Resistance (1)
40
40
Forward Transconductance
(1)(2)
g
fs
100
mS
V
DS
=25V,I
D
=100mA
Input Capacitance (2)
C
iss
C
oss
70
pF
Common Source Output
Capacitance (2)
10
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
7
ns
V
DD
≈
25V, I
D
=100mA
Rise Time (2)(3)
7
ns
Turn-Off Delay Time (2)(3)
16
ns
Fall Time (2)(3)
10
ns
(
1
)
Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
E-Line
TO92 Compatible
ZVNL535A
3-405
D
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