參數(shù)資料
型號(hào)： ZVNL120G
廠商： ZETEX PLC
元件分類(lèi)： JFETs
英文描述： N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
中文描述： 0.32 A, 200 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SOT-223, 4 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 47K
代理商： ZVNL120G
SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - J ANUARY 1996
%
FEATURES
*
V
DS
- 200V
*
R
DS(ON)
- 10
PARTMARKING DETAIL - ZVNL120
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
200
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
320
mA
2
A
Gate-Source Voltage
±
20
2
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
W
-55 to +150
°C
MAX .
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DS S
200
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS (th)
Gate-Body Leakage
0.5
1.5
V
I
D
=1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=200V, V
GS
=0V
V
=160V, V
GS
=0V,
T=125°C
(2)
I
GS S
I
DS S
100
nA
Zero Gate Voltage Drain
Current
10
100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
500
mA
V
DS
=25V, V
GS
=5V
V
GS
=5V, I
D
=250mA
V
GS
=3V, I
D
=125mA
V
DS
=25V, I
D
=250mA
Static Drain-Source On-State
Resistance (1)
10
10
mS
Forward Transconductance(1)(2) g
fs
Input Capacitance (2)
200
C
iss
C
oss
85
pF
Common Source Output
Capacitance (2)
20
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
Turn-On Delay Time (2)(3)
7
pF
t
d(on)
t
r
t
d(off)
t
f
8
ns
V
DD
≈
25V, I
D
=250mA
Rise Time (2)(3)
8
ns
Turn-Off Delay Time (2)(3)
20
ns
Fall Time (2)(3)
12
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVNL120G
3 - 420
D
D
S
G
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