參數(shù)資料
型號(hào)： ZVN4206G(3)
廠商： Zetex Semiconductor
元件分類： TVS-瞬態(tài)抑制二極管
英文描述： Transient Voltage Suppressor Diodes
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 45K
代理商： ZVN4206G(3)
ZVN4206G
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Drain-Source Breakdown Voltage BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.3
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain Current
I
DSS
10
100
μ
A
μ
A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
On-State Drain Current (1)
I
D(on)
3
A
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
1
1.5
V
GS
=10V, I
=1.5A
V
GS
=5V, I
D
=0.5A
Forward Transconductance (1)(2) g
fs
300
mS
V
DS
=25V,I
D
=1.5A
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
60
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2)
C
rss
20
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
≈
25V, I
D
=1.5A, V
GEN
=10V
Rise Time (2)(3)
t
r
12
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
3 - 402
3 - 401
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