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參數(shù)資料
| 型號： | ZVN3306A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 46K |
| 代理商： | ZVN3306A |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
60 Volt V
DS
*
R
DSon)
=5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
60
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
270
mA
3
A
Gate-Source Voltage
±
20
625
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX .
UNIT CONDITIONS .
Drain-Source Breakdown
Voltage
BV
DS S
60
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
0.8
2.4
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DS S
0.5
50
μ
A
μ
A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
750
mA
V
DS
=18V, V
GS
=10V
S tatic Drain-Source On-State
Resistance (1)
R
DS (on)
5
V
GS
=10V,I
D
=500mA
Forward Transconductance(1)(2
)
g
fs
150
mS
V
DS
=18V,I
D
=500mA
Input Capacitance (2)
C
iss
35
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
5
ns
V
DD
≈
18V, I
D
=500mA
Rise Time (2)(3)
t
r
7
ns
Turn-Off Delay Time (2)(3)
t
d(off)
6
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
(
2) Sample test.
E-Line
TO92 Compatible
ZVN3306A
3-375
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZVN3306ASTOA | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN3306ASTOB | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN3306ASTZ | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN3306B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 750MA I(D) | TO-39 |
| ZVN3306D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP |
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