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參數(shù)資料
| 型號： | ZTX649 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 61K |
| 代理商： | ZTX649 |
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 APRIL 94
FEATURES
*
25 Volt V
CEO
*
2 Amp continuous current
*
Low saturation voltage
*
P
tot
=1 Watt
APPLICATIONS
*
Motor driver
*
DC-DC converters
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
35
V
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
5
V
Peak Pulse Current
6
A
Continuous Collector Current
2
A
Power Dissipation at T
=25°C
derate above 25°C
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
35
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
25
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
0.1
10
μ
A
μ
A
V
CB
=30V
V
CB
=30V,
T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
μ
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
V
IC=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=50mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
240
MHz
I
=100mA, V
CE
=5V
f=100MHz
E-Line
TO92 Compatible
ZTX649
3-216
C
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