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參數(shù)資料
| 型號(hào)： | ZTX556 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS |
| 中文描述： | 進(jìn)步黨硅平面中功率高壓晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 52K |
| 代理商： | ZTX556 |
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 1 JULY 94
FEATURES
*
300 Volt V
CEO
*
0.5 Amp continuous current
*
P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX556
ZTX557
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-200
-300
V
Collector-Emitter Voltage
-200
-300
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
-0.5
A
Power Dissipation
1.0
W
Operating and Storage Temperature
Range
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX556
ZTX557
UNIT
CONDITIONS.
MIN.
MAX
MIN.
MAX
Collector-Base
Breakdown Voltage
V
(BR)CBO
-200
-300
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200
-300
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
μ
A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
μ
A
μ
A
μ
A
V
CB
=-160V
V
CB
=-200V
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.3
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1
-1
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1
-1
V
IC=-50mA, V
CE
=-10V*
Static Forward
Current Transfer
Ratio
h
FE
50
50
300
50
50
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
Transition
Frequency
f
T
75
75
MHz
I
=-50mA, V
CE
=-10V
f=100MHz
ZTX556
ZTX557
3-200
C
E-Line
TO92 Compatible
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| ZTX556DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | CHIP |
| ZTX556DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | CHIP |
| ZTX556DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | CHIP |
| ZTX556STOA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX556STOB | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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