參數(shù)資料
型號: ZR36506
英文描述: Fast Recovery Rectifier Diodes
中文描述: 外圍芯片
文件頁數(shù): 78/99頁
文件大?。?/td> 452K
代理商: ZR36506
Zoran ZR36506 USBV ision – Datasheet
Zoran Proprietary and Confidential
11 -8
External EEPR OM
EEPR OM Access R egisters
EEPROM access via the ZR36506 registers is enabled when the E2_EN bit in the PWR_REG
register is set. The following registers are used for EEPROM access:
Parameter
Register Address Usage
E2_EN
Reg.0/d7 E2_EN
Enable EEPROM access.
0:
Default after Reset. EEPROM access
disabled.
Enable EEPROM Read and Write
(1)
.
1:
EE_DATA [7..0]
Reg.14 EE_DATA
Data Byte to be written to EEPROM. Also,
last Data Byte that was read from EEPROM.
EE_LSBAD [7..0]
Reg.15 EE_LSBAD 8 Least Significant bits of byte address in
EEPROM to be accessed.
EE_MSBAD [10..8]
Reg.16/d2-d0
3 Most Significant bits of byte address in
EEPROM to be accessed.
EE_DIR
Reg.16/d3 EE_DIR
Select EEPROM access direction:
0:
1:
Select Write operation to EEPROM.
Select Read operation from
EEPROM.
EE_GO/EE_BUSY
Reg.16/d4 EE_GO/
EE_BUSY
This is used as both a command and a status
bit. Writing '1' to this bit will initiate a byte
Read or Write. The EE_GO/EE_BUSY bit
will remain '1' till the end of operation, to
indicate to the host computer when a
EEPROM access can begin.
§
A W rite operation to the EEPROM requires the EEPROM
W P pin to be grounded.
§
A W rite operation requires additional 10 milliseconds in
the EEPROM internal circuits.
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