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參數(shù)資料
| 型號： | XU1003-QD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| 中文描述： | 19.0-26.0 GHz的砷化鎵變送器QFN封裝，7x7mm |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 332K |
| 代理商： | XU1003-QD-EV1 |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
August 2006 - Rev 31-Aug-06
19.0-26.0 GHz GaAs Transmitter
QFN, 7x7mm
U1003-QD
Page 4 of 6
Typical Application
Mimix
Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 26 GHz)
IF IN
2 GHz
XB1004
XP1013
XU1003-QD
Sideband
Reject
RF Out
21.2-23.6 GHz
LO(+2.0dBm)
9.6-10.8 GHz (USB Operation)
11.6-12.8 GHz (LSB Operation)
Mimix Broadband's 19.0-26.0 GHz XU1003-QD GaAs MMIC Transmitter can be used in saturated radio applications and
linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from
19.0-26.0 GHz.
MTTF Tables (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=4.0V, Vd2=4.0V, Id1=230 mA, Id2=116 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
App Note [1] Biasing
- This device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=230mA and
Vd2=4.0V, Id2=116mA. It is recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct
drain current and thus drain voltage. The typical gate voltage needed to do this is -0.1V. Typically the gate is protected
with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
相關(guān)PDF資料 |
PDF描述 |
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| XU1003 | 19.0-26.0 GHz GaAs MMIC Transmitter |
| XU1004_06 | 32.0-45.0 GHz GaAs MMIC |
| XU1004 | 32.0-45.0 GHz GaAs MMIC Transmitter |
| XU1005-BD | 10.0-18.0 GHz GaAs MMIC Transmitter |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1003-V | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
| XU1004 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC |
| XU1004_06 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC |
| XU1004-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC Transmitter |
| XU1004-BD_08 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC |
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