參數(shù)資料
型號(hào): XU1004
廠商: MIMIX BROADBAND INC
元件分類: 通信及網(wǎng)絡(luò)
英文描述: 32.0-45.0 GHz GaAs MMIC Transmitter
中文描述: SPECIALTY TELECOM CIRCUIT, UUC10
封裝: DIE-10
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 268K
代理商: XU1004
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 20-May-05
Mimix Broadband
s 32.0-45.0 GHz GaAs MMIC transmitter has a
+14.0 dBm output third order intercept across the band. This
device is a balanced, resistive pHEMT mixer followed by a
distributed output amplifier and includes an integrated LO
doubler and LO buffer amplifier. The use of integrated LO
doubler and LO buffer amplifier makes the provision of the LO
easier than for fundamental mixers at these frequencies. IF and
IF mixer inputs are provided and an external 180 degree hybrid
is required to select the desired sideband. This MMIC uses
Mimix Broadband
s 0.15
m GaAs PHEMT device model
technology, and is based upon electron beam lithography to
ensure high repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
32.0-45.0 GHz GaAs MMIC
Transmitter
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Isolation LO/RF @ LOx1
Isolation LO/RF @ LOx2
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3,4) Mixer, Doubler
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 dBm.
Page 1 of 7
Sub-harmonic Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+14.0 dBm Output Third Order Intercept (OIP3)
+4.0 dBm LO Drive Level
5.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
200, 180 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dB
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
35.0
32.0
16.0
DC
-
-
-
-
-
-
-
-1.2
-1.2
-
-
Typ.
-
-
-
-
10.0
5.0
+4.0
TBD
TBD
+14.0
+4.0
-0.3
-0.5
160
145
Max.
45.0
42.0
25.0
4.0
-
-
-
-
-
-
+5.5
+0.1
+0.1
180
165
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
1,2
3
2
U1004
相關(guān)PDF資料
PDF描述
XU1005-BD 10.0-18.0 GHz GaAs MMIC Transmitter
XU1005-BD-000V 10.0-18.0 GHz GaAs MMIC Transmitter
XU1005-BD-EV1 10.0-18.0 GHz GaAs MMIC Transmitter
XU1005-QD 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm
XU1005-QD-0N00 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm
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