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參數(shù)資料
| 型號(hào)： | XU1004 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | 32.0-45.0 GHz GaAs MMIC Transmitter |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, UUC10 |
| 封裝： | DIE-10 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 268K |
| 代理商： | XU1004 |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 4 of 7
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd1=Vd2=4.0V, Id1=160 mA, Id2=145 mA
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V,
Id1=160mA and Id2=145mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or
below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain
correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying
the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
May 2005 - Rev 20-May-05
32.0-45.0 GHz GaAs MMIC
Transmitter
U1004
Typical Application
Mimix Broadband's 32.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 32.0-45.0 GHz.
Mixer
Mimix
Broadband MMIC-based 32.0-45.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 45 GHz)
RF OUT
37.0-39.5 GHz
XU1004
XP1005
Coupler
IF In
2 GHz
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Buffer
X
X2
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| XU1005-QD | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1004_06 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC |
| XU1004-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC Transmitter |
| XU1004-BD_08 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC |
| XU1004-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC Transmitter |
| XU1004-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:32.0-45.0 GHz GaAs MMIC Transmitter |
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