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參數(shù)資料
| 型號(hào)： | XU1005-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | 10.0-18.0 GHz GaAs MMIC Transmitter |
| 中文描述： | RF/MICROWAVE UP CONVERTER |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIE-12 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 373K |
| 代理商： | XU1005-BD-000V |
XU1005-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17
dBm output third order intercept and 15 dB image rejection across the
band. This device is an image reject, balanced mixer followed by a two
stage output amplifier. The image reject mixer reduces the need for
unwanted sideband filtering before the power amplifier. I and Q mixer
inputs are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband
’
s 0.15
μ
m GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The chip
has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
10.0-18.0 GHz GaAs MMIC
Transmitter
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Isolation LO/RF
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1,2,3)
Source Bias Voltage (Vs1)
Gate Bias Voltage (Vg1), Mixer
Gate Bias Voltage (Vg2,3)
Supply Current (Id1) (Vd1=5.0V)
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
Supply Current (Id3) (Vd3=5.0V, Vg=-0.1V Typical)
Supply Current (Iss) (Vss=-5.0V)
Page 1 of 8
Integrated Mixer, LO Buffer and Output Amplifier
8 dB Conversion Gain
15 dB Image Rejection
+17 dBm OIP3
+6 dBm LO Drive Level
-12 dBm LO Leakage Power
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250,150,250 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Units
GHz
GHz
GHz
dB
dB
dBm
dB
dBm
VDC
VDC
VDC
VDC
mA
mA
mA
mA
Min.
10.0
7.0
DC
-
-
-
-
-
-
-
-
-1.2
-
-
-
-
Typ.
-
-
-
18.0
9.0
+6.0
18.0
+17.0
+5.0
-5.0
-0.6
-0.1
140
70
140
140
Max.
18.0
21.0
3.0
-
-
-
-
-
+5.5
-
-
+0.1
200
100
200
200
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
March 2007 - Rev 01-Mar-07
U1005-BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XU1005-BD-EV1 | 10.0-18.0 GHz GaAs MMIC Transmitter |
| XU1005-QD | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N00 | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N0T | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-EV1 | 10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1005-BD-EV1 | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:10.0-18.0 GHz GaAs MMIC Transmitter |
| XU1005-QD | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD_07 | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1005-QD-0N00 | 制造商:M/A-COM Technology Solutions 功能描述:RF TRANSMITTER MODULE |
| XU1005-QD-0N0T | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:10.0-18.0 GHz GaAs Transmitter QFN, 7x7mm |
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