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參數(shù)資料
| 型號(hào)： | XU1003 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 19.0-26.0 GHz GaAs MMIC Transmitter |
| 中文描述： | 19000 MHz - 26000 MHz RF/MICROWAVE UP CONVERTER |
| 封裝： | DIE-10 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 346K |
| 代理商： | XU1003 |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
June 2005 - Rev 21-Jun-05
Mimix Broadband
s 19.0-26.0 GHz GaAs MMIC transmitter has a
+20.0 dBm output third order intercept and 15.0 dB image
rejection across the band. This device is an image reject sub-
harmonic anti-parallel diode mixer followed by a balanced two
stage output amplifier and includes an integrated LO buffer
amplifier. The image reject mixer reduces the need for
unwanted sideband filtering before the power amplifier. The
use of a sub-harmonic mixer makes the provision of the LO
easier than for fundamental mixers at these frequencies. I and Q
mixer inputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This MMIC uses Mimix
Broadband
s 0.15
m GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
19.0-26.0 GHz GaAs MMIC
Transmitter
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Image Rejection
Isolation 2xLO to RF
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=4.0V, Vg=-0.1V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.1V Typical)
Page 1 of 7
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
2.0 dBm LO Drive Level
15.0 dB Image Rejection, 10.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.0 VDC
320, 165 mA
+0.5 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
19.0
19.0
8.0
DC
-
-
-
-
-
-
-
-
-1.2
-
-
Typ.
-
-
-
-
14.0
10.0
+2.0
15.0
-12.0
TBD
+4.0
+4.0
-0.1
230
116
Max.
26.0
26.0
14.5
3.0
-
-
-
-
-
-
+4.5
+4.5
+0.3
280
140
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
U1003
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XU1003-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs MMIC Transmitter |
| XU1003-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs MMIC Transmitter |
| XU1003-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs MMIC Transmitter |
| XU1003-QD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
| XU1003-QD-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm |
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