參數(shù)資料
型號: XN0421L(XN421L)
英文描述: 複合デバイス - 複合トランジスタ
中文描述: 複合デバイス-複合トランジスタ
文件頁數(shù): 1/3頁
文件大小: 62K
代理商: XN0421L(XN421L)
1
Composite Transistors
XN04210 (XN4210)
Silicon NPN epitaxial planer transistor
For switching/digital circuits
I Features
G Two elements incorporated into one package.
(Transistors with built-in resistor)
G Reduction of the mounting area and assembly cost by one half.
I Basic Part Number of Element
G UNR1210(UN1210)
× 2 elements
I Absolute Maximum Ratings (Ta=25C)
1 : Collector (Tr1)
4 : Collector (Tr2)
2 : Base (Tr2)
5 : Base (Tr1)
3 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Unit: mm
Marking Symbol:
8Z
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
Rating
of
element
Overall
I Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10
A, I
E = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Collector cutoff current
ICBO
VCB = 50V, IE = 0
0.1
A
ICEO
VCE = 50V, IB = 0
0.5
A
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
0.01
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
160
460
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
V
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1k
4.9
V
Output voltage low level
VOL
VCC = 5V, VB = 2.5V, RL = 1k
0.2
V
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
150
MHz
Input resistance
R1
–30%
47
+30%
k
2.8
+0.2
–0.3
1.5
0.65
±0.15
0.65
±0.15
1
6
5
4
3
2
1.45
±
0.1
0.95
1.9
±
0.1
+0.25
–0.05
0.3
+0.1 –0.05
0.5
+0.1 –0.05
2.9
+0.2 –0.05
1.1
+0.2
–0.1
0.8
0.4
±0.2
0
to
0.05
0.16
+0.1
–0.06
0.1 to 0.3
6
Tr2
Tr1
5
43
2
1
Note.) The Part number in the Parenthesis shows conventional part number.
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