V
參數(shù)資料
型號: XC4VLX60-10FFG668C
廠商: Xilinx Inc
文件頁數(shù): 12/58頁
文件大?。?/td> 0K
描述: IC FPGA VIRTEX-4 60K 668-FCBGA
標(biāo)準(zhǔn)包裝: 1
系列: Virtex®-4 LX
LAB/CLB數(shù): 6656
邏輯元件/單元數(shù): 59904
RAM 位總計: 2949120
輸入/輸出數(shù): 448
電源電壓: 1.14 V ~ 1.26 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 85°C
封裝/外殼: 668-BBGA,F(xiàn)CBGA
供應(yīng)商設(shè)備封裝: 668-FCBGA
配用: HW-AFX-FF668-400-ND - BOARD DEV VIRTEX 4 FF668
其它名稱: 122-1494
Virtex-4 FPGA Data Sheet: DC and Switching Characteristics
DS302 (v3.7) September 9, 2009
Product Specification
2
VTS
Voltage applied to 3-state 3.3V output
(all user and dedicated I/Os)
–0.75 to 4.05
V
Voltage applied to 3-state 3.3V output
(restricted to maximum of 100 user I/Os)(3,4)
–0.95 to 4.4
(Commercial Temperature)
–0.85 to 4.3
(Industrial Temperature)
V
2.5V or below I/O input voltage relative to GND
(user and dedicated I/Os)
–0.75 to VCCO +0.5
V
AVCCAUXRX
Receive auxiliary supply voltage relative to analog ground, GNDA
(RocketIO pins)
–0.5 to 1.32
V
AVCCAUXTX
Transmit auxiliary supply voltage relative to analog ground, GNDA
(RocketIO pins)
–0.5 to 1.32
V
AVCCAUXMGT
Management auxiliary supply voltage relative to analog ground, GNDA
(RocketIO pins)
–0.5 to 3.0
V
VTRX
Terminal receive supply voltage relative to GND
–0.5 to 3.0
V
VTTX
Terminal transmit supply voltage relative to GND
–0.5 to 1.65
V
TSTG
Storage temperature (ambient)
–65 to 150
° C
TSOL
Maximum soldering temperature(2)
+220
° C
TJ
Maximum junction temperature(2)
+125
° C
Notes:
1.
Stresses beyond those listed under Absolute Maximum Ratings might cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied. Exposure to
Absolute Maximum Ratings conditions for extended periods of time might affect device reliability.
2.
For soldering guidelines and thermal considerations, see the Virtex-4 Packaging and Pinout Specification on the Xilinx website.
3.
When using more than 100 3.3V I/Os, refer to the Virtex-4 FPGA User Guide, Chapter 6, “3.3V I/O Design Guidelines.”
4.
For more flexibility in specific designs, a maximum of 100 user I/Os can be stressed beyond the normal spec for no more than 20% of a data period.
There are no bank restrictions.
Table 2: Recommended Operating Conditions
Symbol
Description
Min
Max
Units
VCCINT
Internal supply voltage relative to GND, TJ =0° C to +85° C
Commercial
1.14
1.26
V
Internal supply voltage relative to GND, TJ = –40° C to +100° C
Industrial
1.14
1.26
V
VCCAUX
Auxiliary supply voltage relative to GND, TJ =0° C to +85° C
Commercial
2.375
2.625
V
Auxiliary supply voltage relative to GND, TJ = –40° C to +100° C
Industrial
2.375
2.625
V
VCCO(1,3,4,5)
Supply voltage relative to GND, TJ =0° C to +85° C
Commercial
1.14
3.45
V
Supply voltage relative to GND, TJ = –40° C to +100° C
Industrial
1.14
3.45
V
VIN
3.3V supply voltage relative to GND, TJ =0° C to +85° C
Commercial
GND – 0.20
3.45
V
3.3V supply voltage relative to GND, TJ = –40° C to +100° C
Industrial
GND – 0.20
3.45
V
2.5V and below supply voltage relative to GND,
TJ =0° C to +85° C
Commercial
GND – 0.20
VCCO +0.2
V
2.5V and below supply voltage relative to GND,
TJ =–40° C to +100° C
Industrial
GND – 0.20
VCCO +0.2
V
IIN
Maximum current through any pin in a powered or unpowered
bank when forward biasing the clamp diode.
Commercial
10
mA
Industrial
10
mA
Battery voltage relative to GND, TJ =0° C to +85° CCommercial
1.0
3.6
V
Battery voltage relative to GND, TJ = –40° C to +100° C
Industrial
1.0
3.6
V
Table 1: Absolute Maximum Ratings (Continued)
Symbol
Description
Units
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