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參數(shù)資料
| 型號： | WV3EG32M64ETSU335D3MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 247K |
| 代理商： | WV3EG32M64ETSU335D3MG |
White Electronic Designs
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
July 2005
Rev. 0
ADVANCED
WV3EG32M64ETSU-D3
CAPACITANCE (Samsung)
TA = 25°C, f = 1MHz, VCC = VCCQ = 2.5V
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12, BA0-BA1, RAS#, CAS#, WE#)
CIN1
20
28
pF
Input Capacitance (CKE0)
CIN2
20
28
pF
Input Capacitance (CS0#)
CIN3
20
28
pF
Input Capacitance (CLK0, CLK1, CLK2, CLK0#, CLK1#, CLK2#)
CIN4
10
13
pF
Input Capacitance (DM0-DM7)
CIN5
89
pF
Data and DQS input/output capacitance (DQ0-DQ63)
COUT1
89
pF
NOTE: Capacitance based on Samsung components.
CAPACITANCE (Inneon)
TA = 25°C, f = 1MHz, VCC = VCCQ = 2.5V
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12, BA0-BA1, RAS#, CAS#, WE#)
CIN1
20
28
pF
Input Capacitance (CKE0)
CIN2
20
28
pF
Input Capacitance (CS0#)
CIN3
20
28
pF
Input Capacitance (CLK0, CLK1, CLK2, CLK0#, CLK1#, CLK2#)
CIN4
10
13
pF
Input Capacitance (DM0-DM7)
CIN5
89
pF
Data and DQS input/output capacitance (DQ0-DQ63)
COUT1
89
pF
NOTE: Capacitance based on Inneon components.
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相關代理商/技術參數(shù) |
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|---|---|
| WV3EG32M64ETSU335D3SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| WV3EG32M64ETSU-D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| WV3EG6434S262BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6434S265BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6434S335BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
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