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參數(shù)資料
| 型號： | WV3EG32M64ETSU335D3MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 247K |
| 代理商： | WV3EG32M64ETSU335D3MG |
White Electronic Designs
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
July 2005
Rev. 0
ADVANCED
WV3EG32M64ETSU-D3
AC OPERATING TEST CONDITIONS
VCC = 2.5V, VCCQ = 2.5V, 0°C TA 70°C
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
1
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
1
Input Differential Voltage, CK and CK# inputs
VID(AC)
0.7
V+0.6
V
Input Crossing Point Voltage, CK and CK# inputs
VIX(AC)
0.5*VCCQ-0.2
0.5*VCCQ+0.2
V
NOTES:
1. VIH overshoot: VIH = VCCQ +1.5V for a pulse width < 3ns and the pulse can not be greater than 1/3 of the cycle rate.
VIL undershoot: VIL = -1.5V for a pulse width < 3ns and the pulse can not be greater than 1/3 of the cycle rate.
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| WV3EG32M64ETSU335D3SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| WV3EG32M64ETSU-D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| WV3EG6434S262BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6434S265BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6434S335BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
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