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參數(shù)資料
| 型號： | WEDPS512K32-35BC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PBGA143 |
| 封裝： | 16 X 18 MM, PLASTIC, BGA-143 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 202K |
| 代理商： | WEDPS512K32-35BC |
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WEDPS512K32-XBX
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
30
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
10
pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
10
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
10
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
30
pF
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current x 32 Mode
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
660
mA
StandbyCurrent
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
80
mA
Output Low Voltage
VOL
IOL = 8mA for 15 - 35ns,
0.4
V
IOL = 2.1mA for 45 - 55ns, Vcc = 4.5
Output High Voltage
VOH
IOH = -4.0mA for 15 - 35ns,
2.4
V
IOH = -1.0mA for 45 - 55ns, Vcc = 4.5
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
This parameter is guaranteed by design but not tested.
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