參數(shù)資料
型號(hào): WEDPN8M72VR-66I
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 8M X 72 SYNCHRONOUS DRAM MODULE, 7.5 ns, PBGA219
封裝: 32 X 25 MM, PLASTIC, BGA-219
文件頁數(shù): 12/12頁
文件大?。?/td> 208K
代理商: WEDPN8M72VR-66I
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN8M72VR-XBX
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (Notes 1, 6)
(VCC = +3.3V
±0.3V; TA = -55°C to +125°C)
Parameter/Condition
Symbol
Units
Min
Max
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V
≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-5
5
A
Input Leakage Address Current (All other pins not under test = 0V)
II
-25
25
A
Output Leakage Current: I/Os are disabled; 0V
≤ VOUT ≤ VCC
IOZ
-5
5
A
Output Levels:
Output High Voltage (IOUT = -4mA)
VOH
2.4
V
Output Low Voltage (IOUT = 4mA)
VOL
0.4
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VDD, VDDQ Supply relative to Vss
-1 to 4.6
V
Voltage on NC or I/O pins relative to Vss
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +150
°C
Power Dissipation
5
W
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions greater than those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE (Note 2)
Parameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
10
pF
Addresses, BA0-1 Input Capacitance
CA
10
pF
Input Capacitance: All other input-only pins
CI2
10
pF
Input/Output Capacitance: I/Os
CIO
12
pF
ICC SPECIFICATIONS AND CONDITIONS (Notes 1,6,11,13)
(VCC = +3.3V
±0.3V; TA = -55°C to +125°C)
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
ICC1
750
mA
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
ICC3
250
mA
All banks active after tRCD met; No accesses in progress (3, 12, 19)
Operating Current: Burst Mode; Continuous burst;
ICC4
750
mA
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
Self Refresh Current: CKE
≤ 0.2V (Commercial Temperature: 0°C to + 70°C) (27)
ICC7
10
mA
Self Refresh Current: CKE
≤ 0.2V (Industrial Temperature: (-40°C to + 85°C) (27)
ICC7
10
mA
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