參數(shù)資料
型號(hào)： WED9LAPC2C16P8BI
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： DRAM
英文描述： 4M X 32 SYNCHRONOUS DRAM, PBGA153
封裝： 14 X 22 MM, BGA-153
文件頁(yè)數(shù)： 15/21頁(yè)
文件大?。?/td> 693K
代理商： WED9LAPC2C16P8BI
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2B16P8BC
November 2001
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Voltage on VCC Relative to VSS
-0.5V to +4.6V
VIN (DQX)
-0.5V to VCC +0.5V
Storage Temperature (BGA)
-55°C to +125°C
Junction Temperature
+125°C
Short Circuit Output Current
50 mA
*Stress greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions greater than those indicated in operational
sections of this specications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
BGA CAPACITANCE
Description
Conditions
Symbol
Typ
Max
Units
Address Input Capacitance1
TA = 25°C; f = 1MHz
CI
58
pF
Input/Output Capacitance (DQ)1
TA = 25°C; f = 1MHz
CO
810
pF
Control Input Capacitance1
TA = 25°C; f = 1MHz
CA
58
pF
Clock Input Capacitance1
TA = 25°C; f = 1MHz
CCK
46
pF
NOTE:
1. This parameter is sampled.
DC ELECTRICAL CHARACTERISTICS
Description
Conditions
Symbol
Typ
Max
Units
Operating Current
BRAM and PRAM active
ICC1
170
210
mA
Operating Current
BRAM active/PRAM inactive
ICC2
140
160
mA
Operating Current
BRAM inactive/PRAM active
ICC3
90
110
mA
Operating Current
BRAM inactive/PRAM inactive
ICC4
40
60
mA
RECOMMENDED DC OPERATING CONDITIONS
0°C ≤ TA ≤ 70°C; VCC = 3.3V ± 5% unless otherwise noted
Parameter
Symbol
Min
Max
Units
Supply Voltage (1)
VCC
3.135
3.465
V
Input High Voltage (1,2)
VIH
2.0
VCC +0.3
V
Input Low Voltage (1,2)
VIL
-0.3
0.8
V
Input Leakage Current
0 ≤ VIN ≤ VCC
ILI
-10
10
A
Output Leakage (Output Disabled)
0 ≤ VIN ≤ VCC
ILO
-10
10
A
Output High (IOH = -2mA) (1)
VOH
2.4
—
V
Output Low (IOL = 2mA) (1)
VOL
—
0.4
V
NOTES:
1. All voltages referenced to VSS (GND).
2. Overshoot: VIH ≤ +6.0V for t ≤ tKC/2
Undershoot: VIL ≥ -2.0V for t ≤ tKC/2
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