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參數(shù)資料
| 型號(hào)： | WED3DG6435V10JD1I-MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | ROHS COMPLIANT, SODIMM-144 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 157K |
| 代理商： | WED3DG6435V10JD1I-MG |
WED3DG6435V-D1
-JD1
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
May 2007
Rev. 7
ORDERING INFORMATION FOR D1
Ordering Information
Speed
CAS Latency
Height*
WED3DG6435V10D1-xG
100MHz
CL=2
31.75 (1.250”)
WED3DG6435V7D1-xG
133MHz
CL=2
31.75 (1.250”)
WED3DG6435V75D1-xG
133MHz
CL=3
31.75 (1.250”)
NOTES:
RoHS compliant products. (G = RoHS Compliant) “G” is added at the end of the part number.
Vendor specic part numbers are used to provide memory components source control. The place holder for this is shown as lower case “-x” in the part numbers above and is
to be replaced with the respective vendors code. Consult factory for qualied sourcing options. (M = Micron, S = Samsung, G = Qimonda & consult factory for others)
Consult factory for availability of industrial temperature (-40°C to 85°C) option
ORDERING INFORMATION FOR JD1
Ordering Information
Speed
CAS Latency
Height*
WED3DG6435V10JD1-xG
100MHz
CL=2
31.75 (1.250”)
WED3DG6435V7JD1-xG
133MHz
CL=2
31.75 (1.250”)
WED3DG6435V75JD1-xG
133MHz
CL=3
31.75 (1.250”)
NOTES:
RoHS compliant products. (G = RoHS Compliant) “G” is added at the end of the part number.
Vendor specic part numbers are used to provide memory components source control. The place holder for this is shown as lower case “-x” in the part numbers above and is
to be replaced with the respective vendors code. Consult factory for qualied sourcing options. (M = Micron, S = Samsung, G = Qimonda & consult factory for others)
Consult factory for availability of industrial temperature (-40°C to 85°C) option
3.99
(0.157)
2.01 (0.079 Min)
67.72
(2.661 Max)
32.79
(1.291)
4.60 (0.181)
1.50 (0.059)
28.2
(1.112)
23.14
(0.913)
19.99
(0.787)
31.75
(1.250)
Max
3.81
(0.150)
MAX.
0.99
(0.039)
(± 0.004)
PACKAGE DIMENSIONS FOR D1 AND JD1
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WEDPN16M72VR-100B2I | 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| WEDPN8M64V-133B2C | 8M X 64 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
| WMF2M8-120LM5 | 2M X 8 FLASH 5V PROM, 120 ns, CQCC44 |
| WS128K32N-25H1I | 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 |
| WS128K32N-35H1CA | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED3DG6435V75AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75JD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V7AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V7D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
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