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參數(shù)資料
| 型號(hào)： | WED3DG6435V10JD1I-MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | ROHS COMPLIANT, SODIMM-144 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | WED3DG6435V10JD1I-MG |
WED3DG6435V-D1
-JD1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
May 2007
Rev. 7
OPERATING CURRENT CHARACTERISTICS
VCC = 3.3V, TA = 0°C to +70°C
Version
Parameter
Symbol
Conditions
100/133
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC tRC(min)
IOL = 0mA
1080
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE VIL(max), tCC = 10ns
16
mA
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE VIH(min), CS VIH(min), tcc = 10ns Input
signals are changed one time during 20ns
360
mA
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
1,080
mA
1
Refresh Current
ICC5
tRC tRC(min)
2,280
mA
2
Self Refresh Current
ICC6
CKE 0.2V
20
mA
Notes:
1.
Measured with outputs open.
2.
Refresh period is 64ms.
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相關(guān)代理商/技術(shù)參數(shù) |
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| WED3DG6435V75AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75JD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V7AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V7D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
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