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參數(shù)資料
| 型號： | WE512K8300CI |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 EEPROM 5V MODULE, 300 ns, CDIP32 |
| 封裝： | SINGLE CAVITY, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 133K |
| 代理商： | WE512K8300CI |
4
White Microelectronics Phoenix, AZ (602) 437-1520
10
EEPROM
MODULES
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
WE512K8, WE256K8, WE128K8-XCX
CAPACITANCE
(TA = +25
°C)
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
RECOMMENDED OPERATING CONDITIONS
FIG. 4
AC TEST CIRCUIT
AC TEST CONDITIONS
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Symbol
Unit
Operating Temperature
TA
-55 to +125
°C
Storage Temperature
TSTG
-65 to +150
°C
Signal Voltage Any Pin
VG
-0.6 to + 6.25
V
Voltage on OE and A9
-0.6 to +13.5
V
Thermal Resistance
θJC
28
°C/W
junction to case
Lead Temperature
+300
°C
(soldering -10 secs)
CS
OE
WE
Mode
Data I/O
H
X
Standby
High Z
L
H
Read
Data Out
L
H
L
Write
Data In
X
H
X
Out Disable
High Z/Data Out
X
H
Write
X
L
X
Inhibit
Parameter
Sym
Condition
512Kx8 256Kx8 128Kx8 Unit
Max
Input Capacitance
CIN
VIN = 0V, f = 1MHz
45
80
45
pF
Output Capacitance COUT VI/O = 0V, f = 1MHz
60
80
60
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
Parameter
Symbol
Conditions
512K x 8
256K x 8
128K x 8
Unit
Min
Typ
Max
Min
Typ
Max Min
Typ
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Dynamic Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
80
100
60
90
50
70
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
3
8
2
6
1
4
mA
Output Low Voltage
VOL
IOL = 2.1mA, Vcc = 4.5V
0.45
V
Output High Voltage
VOH
IOH = -400
A, Vcc = 4.5V
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE512K8-300CI | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 300NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WE512K8-300CIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-300CM | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 300NS, 32 DIP, MIL-SCREENED - Bulk |
| WE512K8-300CMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-300CQ | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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