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參數(shù)資料
| 型號： | WE512K8300CI |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 EEPROM 5V MODULE, 300 ns, CDIP32 |
| 封裝： | SINGLE CAVITY, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 133K |
| 代理商： | WE512K8300CI |
8
White Microelectronics Phoenix, AZ (602) 437-1520
10
EEPROM
MODULES
WE512K8, WE256K8, WE128K8-XCX
DATA POLLING
Operation with data polling permits a faster method of writing
to the EEPROM. The actual time to complete the memory
programming cycle is faster than the guaranteed maximum.
The EEPROM features a method to determine when the internal
programming cycle is completed. After a write cycle is
initiated, the EEPROM will respond to read cycles to provide
the microprocessor with the status of the programming cycle.
The status consists of the last data byte written being returned
with data bit I/O7 complemented during the programming
cycle, and I/O7 true after completion.
Data polling allows a simple bit test operation to determine the
status of the EEPROM. During the internal programming cycle, a
read of the last byte written will produce the complement of the
data on I/O7. For example, if the data written consisted of I/O7 =
HIGH, then the data read back would consist of I/O7 = LOW.
A polled byte write sequence would consist of the following steps:
1. write byte to EEPROM
2. store last byte and last address written
3. release a time slice to other tasks
4. read byte from EEPROM - last address
5. compare I/O7 to stored value
a) If different, write cycle is not completed, go to
step 3.
b) If same, write cycle is completed, go to step 1
or step 3.
DATA POLLING AC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
512Kx8
256Kx8
128Kx8
Unit
Min
Max
Min
Max
Min
Max
Data Hold Time
tDH
10
0
ns
Output Enable Hold Time
tOEH
10
0
ns
Output Enable To Output Delay
tOE
100
ns
Write Recovery Time
tWR
00
0
ns
FIG. 8
DATA POLLING
WAVEFORMS
WE1-4
t OEH
t DH
t OE
t WR
HIGH Z
CS1-4
OE
I/O7
ADDRESS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WE128K32-250G1UI | 128K X 32 EEPROM 5V MODULE, 250 ns, CQFP68 |
| WE128K32N-250H1IA | 128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 |
| WMS256K16L-20FGIA | 256K X 16 STANDARD SRAM, 20 ns, CDSO44 |
| WMS256K16-17FGCA | 256K X 16 STANDARD SRAM, 17 ns, CDSO44 |
| W2Z1M72SJ28BC | 1M X 72 MULTI DEVICE SRAM MODULE, 2.8 ns, PBGA209 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE512K8-300CI | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 300NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WE512K8-300CIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-300CM | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 300NS, 32 DIP, MIL-SCREENED - Bulk |
| WE512K8-300CMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-300CQ | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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