參數(shù)資料
型號: W987Z6CBG80
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝: 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54
文件頁數(shù): 45/46頁
文件大?。?/td> 1634K
代理商: W987Z6CBG80
Preliminary W987Z6CB
- 8 -
10. OPERATING CURRENT
(VDD = 2.7V – 3.6V, TA = 0
° C to 70° C for commercial parts, TA = -40° C to 85° C for Industrial parts)
-75/75I
-8/-8I
PARAMETER
SYM.
MAX.
UNIT
NOTES
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst operation
1 bank operation
ICC1
65
60
3
Standby Current
tCK = min, CS = VIH
CKE = VIH
ICC2
20
3
VIH/L = VIH (min.)/ VIL (max.)
Bank: Inactive state
CKE = VIL
(Power down mode)
ICC2P
0.5
3
Standby Current
CLK = VIL, CS = VIH
CKE = VIH
ICC2S
10
VIH/L = VIH (min.)/ VIL (max.)
BANK: Inactive state
CKE = VIL
(Power down mode)
ICC2PS
0.35
mA
No Operating Current
tCK = min., CS = VIH (min.)
CKE = VIH
ICC3
30
BANK: Active state
(4 banks)
CKE = VIL
(Power down mode)
ICC3P
2
Burst Operating Current
tCK = min. Read/ Write command cycling
ICC4
90
85
3, 4
Auto Refresh Current
tCK = min. Auto refresh command cycling
ICC5
150
140
3
Self Refresh Current
Self Refresh Mode CKE = 0.2V
ICC6
400
A
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