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參數(shù)資料
| 型號： | W949D2CBJX5E |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封裝： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件頁數(shù)： | 38/60頁 |
| 文件大?。?/td> | 1160K |
| 代理商： | W949D2CBJX5E |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 43 -
Revision A01-006
7.11.3 Self Refresh Entry and Exit
PRE
NOP
ARF
NOP
ARF
NOP
Pre All
High-z
CK
Command
A10(AP)
DQ
tRP
> t RFC
tRFC
=Don't Care
Address
NOP
tXSR
Any Command
(Auto Refresh
Recommene
d
)
Exit from
Self Refresh
Mode
Enter
Self Refresh
Mode
CKE
ACT
NOP
Ba, A
Row n
7.12 Power Down
Power-down is entered when CKE is registered Low (no accesses can be in progress). If power-down occurs when
all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row
active in any bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output buffers, excluding CK, CK and CKE. In power-down mode,
CKE Low must be maintained, and all other input signals are “Dont Care”. The minimum power-down duration is
specified by tCKE. However, power-down duration is limited by the refresh requirements of the device.
The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT
command). A valid command may be applied tXP after exit from power-down.
For Clock Stop during Power-Down mode, please refer to the Clock Stop subsection in this specification.
7.12.1 Power-Down Entry and Exit
PRE
NOP
Valid
Pre All
High-z
CK
Command
A10 (AP)
DQ
tRP
tCKE
tXP
Address
NOP
Any Command
Exit from
Power Down
Entry
Valid
Precharge Power-Down mode shown; all banks are idle and tRP
is met when Power-down Entry command is issued
= Don't Care
CKE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
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