參數(shù)資料
型號： W78M64VP120SBI
廠商： WHITE ELECTRONIC DESIGNS CORP
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA156
封裝： 13 X 22 MM, PLASTIC, BGA-156
文件頁數(shù)： 27/48頁
文件大小： 1548K
代理商： W78M64VP120SBI
33
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M64VP-XSBX
October 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
No
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Write Additional
Sector Addresses
FAIL. Write reset command
to return to reading array.
PASS. Device returns
to reading array.
Perform Write Operation
Status Algorithm
Select
Additional
Sectors?
Unlock Cycle 1
Unlock Cycle 2
Yes
No
Last Sector
Selected?
Done?
DQ5 = 1?
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Error condition (Exceeded Timing Limits)
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Poll DQ3.
DQ3 = 1?
Each additional cycle must be written within tSEA timeout
The host system may monitor DQ3 or wait tSEA to ensure
acceptance of erase commands
No limit on number of sectors
Commands other than Erase Suspend or selecting additional
sectors for erasure during timeout reset device to reading array
data
FIG: 6 SECTOR ERASE OPERATION
Notes
1. See table 12.1 on page 69 for earse command sequence.
2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout.
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