參數(shù)資料
型號: W78M32V100BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: PROM
英文描述: 8M X 32 FLASH 3.3V PROM, 100 ns, PBGA159
封裝: 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
文件頁數(shù): 28/54頁
文件大?。?/td> 789K
代理商: W78M32V100BC
34
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M32V-XBX
April 2006
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
COMMAND DEFINITIONS TABLES
TABLE 13. MEMORY ARRAY COMMAND DEFINITIONS
Command (Notes)
Cycles
Bus Cycles (Notes 1-4)
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (5)
1
RA
RD
Reset (6)
1
XXX
F0
Autoselect
(Note 7)
Manufacturer ID
4
555
AA
2AA
55
555
90
(BA)X00
04
Device ID (10)
6
555
AA
2AA
55
555
90
(BA)X0
7E
(BA)X0E
20
(BA)X0F
00
SecSi Sector
Factory Protect (8)
4
555
AA
2AA
55
555
90
X03
(see note
8)
Sector Group
Protect Verify (9)
4
555
AAA
2AA
55
555
90
(SA)X02
XX00/
XX01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (11)
1
BA
B0
Program/Erase Resume (12)
1
BA
30
CFI Query (13)
1
55
98
Accelerated Program (15)
2
XX
A0
PA
PD
Unlock Bypass Entry (15)
3
555
AA
2AA
55
555
20
Unlock Bypass Program (15)
2
XX
A0
PA
PD
Unlock Bypass Erase (15)
2
XX
80
XX
10
Unlock Bypass CFI (13, 15)
1
XX
98
Unlock Bypass Reset (15)
2
XXX
90
XXX
00
Legend:
BA = Address of bank switching to autoselect mode, bypass mode, or erase
operation. Determined by A22:A20, see Tables 4 and for more detail.
PA = Program Address (A22:A0). Addresses latch on falling edge of
WE# or CS# pulse, whichever happens later.
PD = Program Data (DQ15:DQ0) for each chip written to location PA. Data latches
on rising edge of WE# or CS# pulse, whichever happens rst.
RA = Read Address (A22:A0).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (A22:A12) for verifying (in autoselect mode) or erasing.
WD = Write Data. See “Conguration Register” denition for specic write data. Data
latched on rising edge of WE#.
X = Don’t care
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Shaded cells in table denote read cycles. All other cycles are write operations.
4.
During unlock and command cycles, when lower address bits are 555 or 2AAh as
shown in table, address bits higher than A11 (except where BA is required) and data
bits higher than DQ7 are don’t cares.
5.
No unlock or command cycles required when bank is reading array data.
6.
The Reset command is required to return to reading array (or to erase-suspend-read
mode if previously in Erase Suspend) when bank is in autoselect mode, or if DQ5
goes high (while bank is providing status information).
7.
Fourth cycle of autoselect command sequence is a read cycle. System must provide
bank address to obtain manufacturer ID or device ID information. See Autoselect
Command Sequence section for more information.
8. The data is C0h for factory and customer locked and 80h for factory locked.
9. The data is 00h for an unprotected sector group and 01h for a protected sector
group.
10. Device ID must be read across cycles 4, 5, and 6.
11. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Program/Erase Suspend mode. Program/Erase Suspend
command is valid only during a sector erase operation, and requires bank
address.
12. Program/Erase Resume command is valid only during Erase
Suspend mode, and requires bank address.
13. Command is valid when device is ready to read array data or when device is In
autoselect mode.
14. WP#/ACC must be at VID during the entire operation of command.
15. Unlock Bypass Entry command is required prior to any Unlock Bypass
operation. Unlock Bypass Reset command is required to return to the reading
array.
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