- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140377 > W3H128M72E-667SBM (MICROSEMI CORP-PMG MICROELECTRONICS) 128M X 72 DDR DRAM, 1.25 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號： | W3H128M72E-667SBM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM, 1.25 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 7/32頁 |
| 文件大?。?/td> | 988K |
| 代理商： | W3H128M72E-667SBM |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
W3H128M72E-XSBX
15
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
EXTENDED MODE REGISTER 2
The extended mode register 2 (EMR2) controls functions
beyond those controlled by the mode register. Currently
all bits in EMR2 are reserved, as shown in Figure 8. The
EMR2 is programmed via the LM command and will
retain the stored information until it is programmed again
or the device loses power. Reprogramming the EMR will
not alter the contents of the memory array, provided it is
performed correctly.
Bit E7 (A7) must be programmed as"1" to provide a faster
refresh rate on devices if the TCASE exceeds 85°C
EMR2 must be loaded when all banks are idle and no
bursts are in progress, and the controller must wait the
specied time tMRD before initiating any subsequent
operation. Violating either of these requirements could
result in unspecied operation.
EXTENDED MODE REGISTER 3
The extended mode register 3 (EMR3) controls functions
beyond those controlled by the mode register. Currently,
all bits in EMR3 are reserved, as shown in Figure 9.
The EMR3 is programmed via the LM command and will
retain the stored information until it is programmed again
or the device loses power. Reprogramming the EMR will
not alter the contents of the memory array, provided it is
performed correctly.
EMR3 must be loaded when all banks are idle and no
bursts are in progress, and the controller must wait the
specified time tMRD before initiating any subsequent
operation. Violating either of these requirements could
result in unspecied operation.
COMMAND TRUTH TABLES
The following tables provide a quick reference of DDR2
SDRAM available commands, including CKE power-down
modes, and bank-to-bank commands.
FIGURE 9 – EXTENDED MODE REGISTER 3 (EMR3) DEFINITION
0
1
0
1
Mode Register Definition
M16
M17
0
0
1
M15
0
0
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
DLL
Posted CAS#
out
A9
A7 A6 A5 A4 A3
A8
A2
A1 A0
Extended Mode
Register (Ex)
Address Bus
97
6
5
4
3
82
1
0
A10
A12
A11
BA0
BA1
10
11
12
13
0
14
15
OCD Program
A13
A14
ODS
RTT
DQS#
RDQS
EMR3
RTT
BA2
16
17
Note: 1. E14 (A14)-E0 (A0) are reserved for future use and must be programmed to
"0." A14 is not used in this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF128K32N-150HC5A | 512K X 8 FLASH 5V PROM MODULE, 150 ns, CPGA66 |
| WS128K32NV-25H1M | 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 |
| WE128K32-200G4Q | 128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68 |
| WE128K32-250G4M | 128K X 32 EEPROM 5V MODULE, 250 ns, CQMA68 |
| WF512K32F-70H1C5 | 512K X 32 FLASH 5V PROM MODULE, 70 ns, CPGA66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H13C1048AT | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors |
| W3H13C1048AT1A | 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: |
| W3H13C1048AT1F | 功能描述:饋通電容器 25volt 0.1uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: |
| W3H15C1038AT | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:High Current Feedthry Capacitors |
| W3H15C1038AT1A | 功能描述:饋通電容器 50volt .01uF X7R RoHS:否 制造商:Tusonix 電容:8200 pF 容差:- 20 %, + 80 % 電壓額定值: 工作溫度范圍: 溫度系數(shù): 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。