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參數(shù)資料
| 型號： | W3EG6433S262D3 |
| 英文描述： | 256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
| 中文描述： | 256MB的- 2x16Mx64 DDR內(nèi)存緩沖 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 246K |
| 代理商： | W3EG6433S262D3 |
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG6433S-D3
-JD3
November 2005
Rev. 2
PRELIMINARY
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
OS
Value
-0.5 to 3.6
-1.0 to 3.6
-55 to +150
24
50
Units
V
V
°C
W
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS
Recommended perating conditions (Voltage referenced to V
SS
=0V, TA=0 to 70°C)
Parameter
Supply Voltage (for device with a nominal V
CC
of 2.5V)
I/O Supply Voltage
I/O Reference Voltage
I/OTermination Voltage
Input Logic High Voltage
Input Logic Low Voltage
Input Voltage Level, CK and CK# Inputs
Input Differential Voltage, CK and CK# Inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver); V
OUT
= V
TT
= 0.84V
Output High Current(Normal strengh driver); V
OUT
= V
TT
= 0.84V
Output High Current(Half strengh driver); V
OUT
= V
TT
= 0.45V
Output High Current(Half strengh driver); V
OUT
= V
TT
= 0.45V
NOTES:
1.
V
REF
is expected to be equal to 0.5*V
CCQ
of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on V
REF
may not exceed +/-2% of the dc
value.
2.
V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and must track variations in the DC level of
V
REF.
3.
V
ID
is the magnitude of the difference between the input level on CK and the input level on CK#.
4.
The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source
voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio
of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
IN(DC)
V
ID(DC)
VI(Ratio)
I
I
I
OZ
I
OH
I
OL
V
OH
V
OL
Min
2.3
2.3
Max
2.7
2.7
Unit
V
V
V
V
V
V
V
V
-
uA
uA
uA
uA
uA
uA
Note
0.49*V
CCQ
V
REF
-0.04
V
REF
+ 0.15
-0.3
-0.3
0.36
0.71
-2
-5
-16.8
16.8
-9
9
0.51*V
CCQ
V
REF
+0.04
V
CCQ
+ 0.3
V
REF
-0.15
V
CCQ
+ 0.3
V
CCQ
+ 0.6
1.4
2
5
1
2
3
4
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| W3EG6433S263D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
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