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參數(shù)資料
| 型號： | W26L11H-70LL |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 134K |
| 代理商： | W26L11H-70LL |
Preliminary W26L11
- 8 -
DATA RETENTION CHARACTERISTICS
(VDD = 2.7v~3.6v,
±0.2V; VSS = 0V; TA (°C) = 0 to 70)
PARAMETER
SYM.
TEST CONDITIONS
POWER
MIN.
TYP. MAX.
UNIT
VDD for Data Retention
VDR
CS
≥ VDD -0.2V ,
VIN
≥ VDD -0.2V
or VIN
≤ 0.2V
2.0
-
3.6
V
Data Retention Current
IDDDR CS
≥ VDD -0.2V
or VCC -0.2V, or
VIN
≤ 0.2V
-
0.5
10
A
Chip Deselect to Data
Retention Time
TCDR See data retention
waveform
0
-
nS
Operation Recovery
Time
TR
TRC*
-
nS
* Read Cycle Time
DATA RETENTION WAVEFORM
TCDR
- 0.2V
DD
V
VDD
CS
TR
CS
VDR
1.5V
=
>
=
>
0.9 x
DD
V
0.9 x
DD
V
ORDERING INFORMATION
PART NO.
ACCESS
TIME (nS)
OPERATING
VOLTAGE
(V)
STANDBY
CURRENT MAX (
A)
PACKAGE
W26L11H-70LL
70
2.7V/3.6V
15
44-pin TSOP
W26L11I-70LL
70
2.7V/3.6V
15
44-pin 400 mil SOJ
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
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