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參數(shù)資料
| 型號(hào)： | W25X40BLSNIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.150 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 27/53頁 |
| 文件大小： | 2041K |
| 代理商： | W25X40BLSNIG |
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W25X10BL/20BL/40BL
Publication Release Date: October 14, 2009
- 33 -
Preliminary -- Revision A
9.2.20
Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 20. After the
time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device
ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
figure 20. The Device ID values for the W25X10BL/20BL/40BL are listed in Manufacturer and Device
Identification table. The Device ID can be read continuously. The instruction is completed by driving
/CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 21, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device
will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on the
current cycle
Figure 20. Release Power-down Instruction Sequence
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25X40BLSSIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X40BLSVIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2.5V 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X40BLUXIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2.5V 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X40BLZPIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X40BV | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
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